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  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL DATA
EMI Filtering TVS For Data Line
A
PF1007UDF12
EMI Filtering TVS
C E
1 6
FEATURES
B F
ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current.
J TOP VIEW
12
D
7
BOTTOM VIEW
Six elements in one package
KL
SIDE VIEW
MAXIMUM RATING (Ta=25
CHARACTERISTIC DC Power Per Resistor Power Dissipation Junction Temperature Storage Temperature * Total Package Power Dissipation
)
SYMBOL PR *PD Tj Tstg RATING 100 mW 600 150 -55 150 UNIT
1,12 : Filter channel 1 2,11 : Filter channel 2 3,10 : Filter channel 3 4,9 : Filter channel 4 5,8 : Filter channel 5 6,7 : Filter channel 6
DIM A B C D E F G H J K L
MILLIMETERS 2.50 1.20 _ 1.80 + 0.10 _ 0.20 + 0.05 0.40 _ 0.30 + 0.10 _ 0.25 + 0.05 0.20 Min _ 0.50 + 0.05 0.125 0.03+0.02/-0.03
UDFN-12
EQUIVALENT CIRCUIT
FILTER 100 FILTER
MARKING
Type Name
7.5pF
7.5pF
T9
Lot No.
GND
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Cutoff Frequency Resistance Capacitance SYMBOL VRWM VBR IR f3dB R C2.5V
)
TEST CONDITION It=1mA VRWM=3V VR=0V, ZSOURCE=50 , ZLOAD=50 Between Input and Output VR=2.5V, Between I/O Pins and GND MIN. 6 TYP. 200 100 15 MAX. 5 1 pF UNIT V V A MHz
2007. 12. 27
Revision No : 0
H
EMI/RFI filtering.
Pin 1
GND PAD
G
1/2
PF1007UDF12
CJ - V R
NORMALIZED CAPACITANCE
2.0 0
S21 - F
1.5
INSERTION LOSS (dB)
-10
1.0
-20
0.5
-30
0.0 0 1 2 3 4 5
-40 1 10 100 1000 6000
REVERSE VOLTAGE VR (V)
FREQUENCY (MHz)
IR - VR
REVERSE LEAKAGE CURRENT IR (nA)
100
10
1
0.1 0 1 2 3 4 5
REVERSE VOLTAGE VR (V)
2007. 12. 27
Revision No : 0
2/2


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